Avalanche breakdown of p-n-junction in radiotechnics
نویسندگان
چکیده
منابع مشابه
P-n Junction Diode
Chemist, led the research for the molecular diode (In the semiconductor industry, called p-n junctions)
متن کاملLinear Mode CMOS Compatible p-n Junction Avalanche Photodiode for Smart-lighting Applications
There is a need in emerging smart lighting concepts for a high-speed sensing capability to enable adaptive lighting (smart spaces) and visible light communication. One approach to address this need is to design and manufacture a novel complementary-metal–oxide– semiconductor (CMOS) compatible, cost-effective detector array and readout circuit (ROIC) that incorporates integrated waveguide detect...
متن کاملDisordered p-n junction in graphene
Graphene is a new material whose unique electronic structure endows it with many unusual properties [1]. A monolayer graphene is a gapless two-dimensional (2D) semiconductor with a massless electron-hole symmetric spectrum near the corners of the Brillouin zone, ǫ(k) = ±~v|k|, where v ≈ 10 cm/s. The concentration of these “Dirac” quasiparticles can be accurately controlled by the electric field...
متن کاملNear unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown
p-n diodes with avalanche breakdown Zongyang Hu, Kazuki Nomoto, Bo Song, Mingda Zhu, Meng Qi, Ming Pan, Xiang Gao, Vladimir Protasenko, Debdeep Jena, and Huili Grace Xing School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA IQE RF LLC, Somerset, New Jersey 088...
متن کامل4H-SiC Diode Avalanche Breakdown Voltage Estimation by Simulation and Junction Termination Extension Analysis
This paper presents and compares different avalanche breakdown voltage estimation methods in 4H-SiC (silicon carbide) using finite element simulation results on Schottky diode. 4H-SiC avalanche breakdown voltage and depletion width estimated with Baliga’s equations have shown to be higher than other estimation techniques and simulation results, especially for voltages higher than 5kV. This pape...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Scientific and Technical Journal of Information Technologies, Mechanics and Optics
سال: 2016
ISSN: 2226-1494
DOI: 10.17586/2226-1494-2016-16-5-864-871